Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

Natural Sciences, Materials Engineering, Materials Science +14

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Natural Sciences, Materials Engineering, Materials Science +17

Strain relaxation kinetics in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures

D. C. Houghton · Journal of Applied Physics · 1991 · 386 citations

Natural Sciences, Materials Science, Physics +17

High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

P.J.A. Thijs, L.F. Tiemeijer, P.I. Kuindersma et al. · IEEE Journal of Quantum Electronics · 1991 · 272 citations

Engineering, Electrical Engineering, Materials Science +17

X-ray diffraction from one-dimensional superlattices in GaAs_1−<i>x</i>P_<i>x</i>crystals

A. Segmüller, A. E. Blakeslee · Journal of Applied Crystallography · 1973 · 213 citations

Natural Sciences, Materials Science, Physics +17