Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

Abstract

Abstract GaInN/GaN multiple quantum well structures grown on polar and nonpolar surfaces have been compared with respect to the indium incorporation efficiency in the quantum wells (QWs). Under the same growth conditions X‐ray diffraction measurements reveal similar growth rates and In concentrations for c ‐plane, a ‐plane, and m ‐plane with In contents up to 40%. These results are in good agreement with optical experiments, in particular for homoepitaxial growth. However, there is strong evidence that the optical properties of the nonpolar heteroepitaxial GaInN QWs are dominated by the high density of stacking faults in those samples.