H. Jönen

Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures

Torsten Langer, Andreas Kruse, Fedor Alexej Ketzer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 114 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

Torsten Langer, H. Jönen, Andreas Kruse et al. · Applied Physics Letters · 2013 · 84 citations

Nonradiative Recombination Centers, Wide-bandgap Semiconductor, Electrical Engineering +15

Auger recombination in GaInN/GaN quantum well laser structures

Moritz Brendel, Andreas Kruse, H. Jönen et al. · Applied Physics Letters · 2011 · 66 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination

Torsten Langer, Hans-Georg Pietscher, Fedor Alexej Ketzer et al. · Physical Review B · 2014 · 44 citations

Wide-bandgap Semiconductor, Engineering, Luminescence Property +16

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Thorsten Mehrtens, Marco Schowalter, Darius Tytko et al. · Applied Physics Letters · 2013 · 37 citations

Engineering, Transmission Electron Microscopy, Microscopy +18