Sebastian Metzner

Three‐dimensional GaN for semipolar light emitters

Thomas Wunderer, Martin Feneberg, Frank Lipski et al. · physica status solidi (b) · 2010 · 64 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Determination of carrier diffusion length in GaN

Shopan Hafiz, Fan Zhang, Morteza Monavarian et al. · Journal of Applied Physics · 2015 · 49 citations

Semiconductors, Top Gan Layers, Electrical Engineering +11

Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

Marcus Müller, Peter Veit, Florian F. Krause et al. · Nano Letters · 2016 · 46 citations

Optical Materials, Engineering, Nanoscopic Insights +22

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Stephan Schwaiger, Sebastian Metzner, Thomas Wunderer et al. · physica status solidi (b) · 2010 · 35 citations

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

Gordon Schmidt, Christoph Berger, Peter Veit et al. · Applied Physics Letters · 2015 · 29 citations

Intense Emission, Engineering, Quantum Engineering +17