U. Rossów

Suppression of Nonradiative Recombination by V-Shaped Pits in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaInN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:math>Quantum Wells Produces a Large Increase in the Light Emission Efficiency

A. Hangleiter, F. Hitzel, Carsten Netzel et al. · Physical Review Letters · 2005 · 399 citations

Engineering, Light Emission Efficiency, Semiconductor Nanostructures +22

Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures

Torsten Langer, Andreas Kruse, Fedor Alexej Ketzer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 114 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

Composition dependence of polarization fields in GaInN/GaN quantum wells

A. Hangleiter, F. Hitzel, S. Lahmann et al. · Applied Physics Letters · 2003 · 103 citations

Polarization Fields, Quantum Science, Stark Effect +12

Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

Torsten Langer, H. Jönen, Andreas Kruse et al. · Applied Physics Letters · 2013 · 84 citations

Nonradiative Recombination Centers, Wide-bandgap Semiconductor, Electrical Engineering +15

Towards understanding the emission efficiency of nitride quantum wells

A. Hangleiter, D. Fuhrmann, M. Grewe et al. · physica status solidi (a) · 2004 · 84 citations

Quantum Science, Photonics, Solid-state Lighting +14