Selective MOVPE of GaN and Al Ga1−N with smooth vertical facets

Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

Shota Kitamura, Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki · Japanese Journal of Applied Physics · 1995 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition

M. Asif Khan, D. T. Olson, J. M. Van Hove et al. · Applied Physics Letters · 1991 · 114 citations

Engineering, Materials Engineering, Materials Science +15

GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy

Tetsuya Akasaka, Yasuyuki Kobayashi, Shinji Ando et al. · Applied Physics Letters · 1997 · 74 citations

Engineering, Materials Engineering, Materials Science +17

Selective area epitaxy of GaN for electron field emission devices

D. Kapolnek, R.D. Underwood, B.P. Keller et al. · Journal of Crystal Growth · 1997 · 45 citations

Engineering, Electrical Engineering, Materials Science +14

Novel Hexagonal-Facet GaAs/AlGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor Deposition

Seigo Ando, Naoki Kobayashi, Hiroaki Ando · Japanese Journal of Applied Physics · 1993 · 36 citations

Engineering, Materials Engineering, Materials Science +17