V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Nature Materials · 2006 · 682 citations

Semiconductors, Materials Science, Aluminium Nitride +7

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

Xuehua Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 456 citations

Semiconductors, Quantum Science, Structural Origin +15

Suppression of Nonradiative Recombination by V-Shaped Pits in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaInN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:math>Quantum Wells Produces a Large Increase in the Light Emission Efficiency

A. Hangleiter, F. Hitzel, Carsten Netzel et al. · Physical Review Letters · 2005 · 399 citations

Engineering, Light Emission Efficiency, Semiconductor Nanostructures +22

Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors

R. P�ssler · physica status solidi (b) · 1999 · 200 citations

Wide-bandgap Semiconductor, Engineering, Effective Phonon Temperatures +22

Chemical mapping and formation of V-defects in InGaN multiple quantum wells

Nikhil Sharma, Paul J. Thomas, David Tricker et al. · Applied Physics Letters · 2000 · 140 citations

Wide-bandgap Semiconductor, Engineering, Chemistry +18