2002 · 23 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMetallic MaterialsMetallurgyAlloysDevice ReliabilityInterconnect TechnologyMetal FabricationMetalsSemiconductor ReliabilityAluminum MetallizationCopper MetallizationElectromigrationElectromigration AnalysisElectromigration ReliabilityInterconnect CharacterizationInterconnect ReliabilityMetallization
The reliability advantages of Ti-Al(Cu)-Ti are introduced in this work. Outstanding tolerance to electromigration damage is measured both single level interconnections and two-level interconnections with tungsten via-studs. A greater than 100* improvement in the median time to failure (t/sub 50/) is measured for Ti-Al(Cu)-Ti interconnections over simple Al(Cu). An integrated, four-level metallization has been realized.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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