Concepedia

Gas source MBE growth of device materials

K. Werner, A. J. Storm, S. Butzke, Jan Willem Maes, M. van Rooy, P.F.A. Alkemade, E. Algra, Marcel A.J. Somers, Birger Lange, E. van der Drift,

Journal of Crystal Growth · 1996 · 14 citations · 45 references

DOI

Concepts

References

45

Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattice grown by molecular beam epitaxy

J. C. Bean, L. C. Feldman, A. T. Fiory et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 676 citations

, , +17

Ge growth on Si using atomic hydrogen as a surfactant

Akira Sakai, Toru Tatsumi · Applied Physics Letters · 1994 · 236 citations

, , +17

Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface

S. M. Gates · Surface Science · 1988 · 214 citations

, , +12

Structure, properties and applications of Ge<sub>x</sub>Si<sub>1-x</sub>strained layers and superlattices

S.C. Jain, W. Hayes · Semiconductor Science and Technology · 1991 · 175 citations

, , +17

Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

K. Ismail, F. K. LeGoues, K. L. Saenger et al. · Physical Review Letters · 1994 · 153 citations

, , +17