Applied Physics Letters · 2000 · 24 citations · 18 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsDopingOptical Properties Of SemiconductorsQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsExcitationGallium NitrideGallium Nitride (Gan) MaterialsOptical PropertiesPhotoluminescence In Quantum WellsQuantum Well HeterostructuresQuantum Well Structures
Micro-photoluminescence (PL) spectra of Si-doped GaN epilayers and three-period In0.1Ga0.9N/In0.02Ga0.98N:Si quantum-well (QW) structures were studied and compared with macro-PL spectra. The shift of the macro-PL peak with increasing Si concentration was found to be similar to that with increasing excitation density in both GaN:Si and InxGa1−xN QWs. Also, it was observed that the macro-PL intensity increased with increasing Si concentration in GaN:Si and InxGa1−xN QWs, but the micro-PL intensity was independent of doping concentration. These results indicate that the changes of PL spectra with Si doping are mainly due to the increase of carriers.
18
The role of dislocation scattering in <i>n</i>-type GaN films
H. M. Ng, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1998 · 437 citations
Luminescences from localized states in InGaN epilayers
Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1997 · 405 citations