Temperature dependence of electron impact ionization in In0.53Ga0.47As

Abstract

Monte Carlo is used to model the electric field and temperature dependence of the electron ionization coefficient, α, in In0.53Ga0.47As, using a two-component ionization rate to account for its observed anomalous dependence on the electric field. α is predicted to decrease with temperature at fields above approximately 180 kV/cm, where impact ionization is limited by the high-energy electron population, and to increase with temperature at lower fields, where it is enhanced by the decreasing ionization threshold energy, in agreement with experimental observations.