Concepedia

A. Feygenson

AF

Statistics

Publications

10

Citations

420

H-Index

10

Active since

1991

Affiliations

AT&T (United States)(Current)

Technion – Israel Institute of Technology

A. Feygenson is an author at AT&T (United States) specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsMaterial SciencePhysicsNanoelectronicsSemiconductorsOptoelectronicsElectronic Devices

Publications per year

1991–2003

10

Publications

10

Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit

S.J. Spiegel, D. Ritter, R. A. Hamm et al. · IEEE Transactions on Electron Devices · 1995 · 80 citations

Device Modeling, Extrinsic Base Resistance, Electrical Engineering +11

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

M. L. Green, B. E. Weir, D. Brasen et al. · Journal of Applied Physics · 1991 · 71 citations

Engineering, Semiconductor Materials, Semiconductor Device +17

Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson et al. · Applied Physics Letters · 1992 · 66 citations

Electrical Engineering, Engineering, Anomalous Electric Field +8

Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson et al. · Applied Physics Letters · 1991 · 57 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson et al. · Applied Physics Letters · 1992 · 40 citations

Electrical Engineering, Energy Barrier, Engineering +8

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