M. L. Green

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

M. L. Green, B. E. Weir, D. Brasen et al. · Journal of Applied Physics · 1991 · 71 citations

Engineering, Semiconductor Materials, Semiconductor Device +17

Improvement in heteroepitaxial film quality by a novel substrate patterning geometry

R. Hull, J. C. Bean, G. S. Higashi et al. · Applied Physics Letters · 1992 · 36 citations

Engineering, Thin Film Process Technology, Silicon On Insulator +18

Growth temperature dependence of the Si(001)/SiO2 interface width

Mau‐Tsu Tang, K. Evans‐Lutterodt, M. L. Green et al. · Applied Physics Letters · 1994 · 29 citations

Materials Science, Growth Temperature Dependence, Growth Temperature +10

Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface

J.L. Dawson, K.S. Krisch, K. Evans‐Lutterodt et al. · Journal of Applied Physics · 1995 · 10 citations

Engineering, Silicon On Insulator, /Sio2 Interface +16