Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface

Abstract

Using x-ray diffraction techniques, we measure the root-mean-square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness; the oxide growth process kinetically smoothens the buried interface. We also find a difference between the rate of smoothing for wet and dry oxides.