Inductively coupled plasma etching of III–V semiconductors in Cl2-based chemistries

Inductively coupled plasma etching of GaN

R. J. Shul, G McClellan, S.A. Casalnuovo et al. · Applied Physics Letters · 1996 · 214 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-density plasma etching of compound semiconductors

R. J. Shul, G McClellan, R. D. Briggs et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 122 citations

Engineering, Materials Engineering, Materials Science +17

Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)

C. R. Abernathy · Materials Science and Engineering R Reports · 1995 · 88 citations

Engineering, Materials Engineering, Materials Science +14

REACTIVE ION ETCHING OF III–V SEMICONDUCTORS

S. J. Pearton · International Journal of Modern Physics B · 1994 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Etching of InP at ≳1 μm/min in Cl2/Ar plasma chemistries

J. W. Lee, Jian Hong, S. J. Pearton · Applied Physics Letters · 1996 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17