Overlay Alignment
Overlay Alignment is a precision registration technique in electron beam lithography that ensures accurate spatial correspondence between successive patterning layers by minimizing misalignment errors through fiducial marker-based positioning.
73
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2.1K
Citations
403
Authors
75
Institutions
Publications per year
2017–2026
3
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Overlay Registration
73
Electron-beam microcolumns for lithography and related applications
T. H. P. Chang, M. G. R. Thomson, E. Kratschmer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 122 citations
Engineering, Manufacturing Engineering, Materials Science +11
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IBM Research - Thomas J. Watson Research Center, United States
3 publications · 185 citations
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75
ASML (Netherlands)
Veldhoven, The Netherlands
10 h-index
74 publications
1.8K citations
Princeton University
Princeton, United States
5 h-index
15 publications
984 citations
KLA (Israel)
Migdal HaEmeq, Israel
5 h-index
26 publications
433 citations
IMEC
Leuven, Belgium
4 h-index
8 publications
170 citations
The University of Texas at Austin
Austin, United States
3 h-index
22 publications
1K citations
Massachusetts Institute of Technology
Cambridge, United States
3 h-index
11 publications
249 citations
Advanced Micro Devices (United States)
Sunnyvale, United States
3 h-index
5 publications
72 citations
STMicroelectronics (France)
Montrouge, France
3 h-index
8 publications
108 citations
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33 publications · 663 citations
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8 publications · 302 citations
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2 publications · 143 citations
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2 publications · 39 citations
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2 publications · 20 citations
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