Concepedia

Dynamic Random Access Memory Modeling

Dynamic Random Access Memory Modeling is a computational framework that formally characterizes the behavior, performance, and reliability of dynamic random access memory systems by integrating temporal dynamics, charge leakage effects, and access patterns into predictive models for memory operation and optimization.

43

Publications

2.8K

Citations

164

Authors

42

Institutions

Publications per year

2017–2026

11

Variants

Dram Modeling

Parents

Publications

43

Basic mechanisms and modeling of single-event upset in digital microelectronics

P.E. Dodd, L. W. Massengill · IEEE Transactions on Nuclear Science · 2003 · 1.1K citations

, , +17

A Process model of strategic business exit: Implications for an evolutionary perspective on strategy

Robert A. Burgelman · Strategic Management Journal · 2007 · 379 citations

, , +17

Understanding the Energy Consumption of Dynamic Random Access Memories

Thomas Vogelsang · 2010 · 253 citations

, , +17

Electronic part life cycle concepts and obsolescence forecasting

Michael Pecht, Peter Sandborn, Rajeev Solomon · IEEE Transactions on Components and Packaging Technologies · 2000 · 191 citations

, , +17

Accurate Estimation of SRAM Dynamic Stability

Diaa Khalil, Muhammad Khellah, Nam-Sung Kim et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2008 · 75 citations

, , +17

1–5 of 43

Authors

164

  1. MJ
    Matthias Jung

    University of Kaiserslautern, Germany

    5 publications · 109 citations

    5

    h-index

  2. NW
    Norbert Wehn

    University of Kaiserslautern, Germany

    5 publications · 109 citations

    5

    h-index

  3. CW
    Christian Weis

    University of Kaiserslautern, Germany

    4 publications · 94 citations

    4

    h-index

  4. DM
    Deepak M. Mathew

    University of Kaiserslautern, Germany

    3 publications · 62 citations

    3

    h-index

  5. AH
    Atsushi Hiraiwa

    Waseda University, Japan

    2 publications · 57 citations

    2

    h-index

1–5 of 164

Institutions

42

  1. University of Kaiserslautern

    Kaiserslautern, Germany

    5 h-index

    21 publications

    454 citations

  2. Hitachi (Japan)

    Tokyo, Japan

    4 h-index

    21 publications

    444 citations

  3. Seoul National University

    Seoul, South Korea

    3 h-index

    7 publications

    140 citations

  4. Stanford University

    Stanford, United States

    2 h-index

    2 publications

    398 citations

  5. Samsung (South Korea)

    Seoul, South Korea

    2 h-index

    11 publications

    225 citations

  6. Fraunhofer Institute for Experimental Software Engineering

    Kaiserslautern, Germany

    2 h-index

    2 publications

    33 citations

  7. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    2 h-index

    8 publications

    191 citations

  8. Korea Advanced Institute of Science and Technology

    Daejeon, South Korea

    2 h-index

    2 publications

    21 citations

1–8 of 42

Venues

  1. IEEE Electron Device Letters

    2 publications · 37 citations

    2

    h-index

  2. IEEE Transactions on Nuclear Science

    2 publications · 1.2K citations

    2

    h-index

  3. 1

    h-index

  4. Solid-State Electronics

    1 publications · 12 citations

    1

    h-index

  5. Strategic Management Journal

    SMJ · 1 publications · 379 citations

    1

    h-index

1–5