Thomas Vogelsang

Understanding the Energy Consumption of Dynamic Random Access Memories

Thomas Vogelsang · 2010 · 253 citations

Engineering, Computer Engineering, Computer Systems +17

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

A. Abramo, L. Baudry, R. Brunetti et al. · IEEE Transactions on Electron Devices · 1994 · 69 citations · Full text

Engineering, Electrical Engineering, Physics +15

Do superconducting processors really need cryogenic memories?

F. Ware, Liji Gopalakrishnan, Eric Linstadt et al. · Proceedings of the International Symposium on Memory Systems · 2017 · 48 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +13

DRAM Retention at Cryogenic Temperatures

Fiona Wang, Thomas Vogelsang, Brent Haukness et al. · 2018 · 35 citations

Engineering, Computer Engineering, Computer Systems +14

Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrates

Thomas Vogelsang, K.R. Hofmann · IEEE Transactions on Electron Devices · 1992 · 28 citations

Engineering, Electrical Engineering, Materials Engineering +17