Concepedia

Doping Uniformity

Doping Uniformity is a materials science metric that quantifies the consistency of dopant concentration distribution within a host material, distinguishing it from related doping characteristics by specifically addressing spatial homogeneity at microscopic or macroscopic scales.

115

Publications

4.6K

Citations

620

Authors

213

Institutions

Publications per year

2017–2026

25

Parents

Publications

115

Facile One‐Pot, One‐Step Synthesis of a Carbon Nanoarchitecture for an Advanced Multifunctonal Electrocatalyst

Zhenhai Wen, Suqin Ci, Yang Hou et al. · Angewandte Chemie International Edition · 2014 · 183 citations · Full text

, , +17

Universal <i>In Situ</i> Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis

Tianyi Zhang, Kazunori Fujisawa, Fu Zhang et al. · ACS Nano · 2020 · 167 citations

, , +17

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata et al. · physica status solidi (b) · 2009 · 167 citations

, , +17

Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

Andrew R. Brown, Gareth Roy, A. Asenov · IEEE Transactions on Electron Devices · 2007 · 136 citations

, , +17

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Alfred J. Baca, Matthew Meitl, Heung Cho Ko et al. · Advanced Functional Materials · 2007 · 129 citations

, , +17

1–5 of 115

Authors

620

  1. JC
    Junhong Chen

    University of Wisconsin–Milwaukee, United States

    2 publications · 210 citations

    2

    h-index

  2. HT
    Hidekazu Tsuchida

    Central Research Institute of Electric Power Industry, Japan

    2 publications · 257 citations

    2

    h-index

  3. SC
    Suqin Ci

    Nanchang Hangkong University, China

    2 publications · 210 citations

    2

    h-index

  4. DS
    David S. Perloff

    United Microelectronics (United States), United States

    2 publications · 47 citations

    2

    h-index

  5. RD
    Ray Duffy

    University College Cork, Ireland

    2 publications · 38 citations

    2

    h-index

1–5 of 620

Institutions

213

  1. Chinese Academy of Sciences

    Beijing, China

    6 h-index

    33 publications

    1.3K citations

  2. Pohang University of Science and Technology

    Pohang, South Korea

    3 h-index

    14 publications

    800 citations

  3. NTT (Japan)

    Tokyo, Japan

    3 h-index

    7 publications

    288 citations

  4. Texas Instruments (United States)

    Dallas, United States

    2 h-index

    7 publications

    96 citations

  5. Hebrew University of Jerusalem

    Jerusalem, Israel

    2 h-index

    9 publications

    245 citations

  6. University of Surrey

    Guildford, United Kingdom

    2 h-index

    3 publications

    77 citations

  7. NXP (Belgium)

    Leuven, Belgium

    2 h-index

    17 publications

    401 citations

  8. University of Glasgow

    Glasgow, United Kingdom

    2 h-index

    5 publications

    464 citations

1–8 of 213

Venues

  1. IEEE Transactions on Electron Devices

    12 publications · 708 citations

    11

    h-index

  2. Journal of Applied Physics

    9 publications · 172 citations

    9

    h-index

  3. IEEE Electron Device Letters

    5 publications · 160 citations

    5

    h-index

  4. Applied Physics Letters

    4 publications · 83 citations

    4

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 3 publications · 65 citations

    3

    h-index

1–5