Byung Jin Cho - Concepedia

Author

Byung Jin Cho

Korea Advanced Institute of Science and Technology

Also Known As

B.‐J. Cho, Byung Jin Cho

Publications

212

Citations

H-Index

Concepts

All Affiliations

Korea Advanced Institute of Science and Technology National University of Singapore Korea University Korea Aerospace University

About

Byung Jin Cho is an author at Korea Advanced Institute of Science and Technology specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	188
2	Applied Physics	9	9	188
3	Electrical Engineering	9	9	188
4	Materials Engineering	4	4	91
5	Computer Engineering	1	1	11

Byung Jin Cho

Publications

188

Citations

H-Index

Page 1

	Year	Citations
High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation Yan Ny Tan, W. K. Chim, Wee Kiong Choi, Materials ScienceMaterials EngineeringElectrical EngineeringHigh-k Hfalo ChargeEngineering	2005	51
The Impact of an Ultrathin Y<sub>2</sub>O<sub>3</sub>Layer on GeO<sub>2</sub>Passivation in Ge MOS Gate Stacks Yujin Seo, Tae In Lee, Chang Mo Yoon, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringPhysics	2017	28
Atomic Layer Deposited High‐κ Films and Their Role in Metal‐Insulator‐Metal Capacitors for Si RF/Analog Integrated Circuit Applications Chun Zhu, Byung Jin Cho, Ming Fu Li Chemical Vapor Deposition DielectricsEngineeringIntegrated CircuitsThin Film Process TechnologySilicon On Insulator	2006	23
The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances Jeong-Kyu Kim, Gwang-Sik Kim, Hyohyun Nam, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2014	19
Non-volatile memory using graphene oxide for flexible electronics Seul Ki Hong, Ji‐Eun Kim, Sang Ouk Kim, Materials ScienceGraphene NanomeshesElectrical EngineeringElectronic DevicesEngineering	2010	16
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Hao Guan, Byung Jin Cho, Meie Li, IEEE Transactions on Electron Devices EngineeringInterface-controlled MechanismUltrathin Gate OxideSemiconductor DeviceNanoelectronics	2001	14
Very Low-Work-Function ALD-Erbium Carbide (ErC<sub>2</sub>) Metal Electrode on High-<inline-formula> <tex-math notation="LaTeX">$K$ </tex-math> </inline-formula> Dielectrics Hyun Jun Ahn, Jung-Min Moon, Sungho Koh, IEEE Transactions on Electron Devices Magnetic PropertiesEngineeringMetal ElectrodeTex-math Notation=Electrode Reaction Mechanism	2016	14
Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices Wan-Sik Hwang, D.S.H. Chan, Byung Jin Cho IEEE Transactions on Electron Devices Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringNanoelectronics	2008	12
Band offset FinFET-based URAM (Unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM Jin‐Woo Han, Seong‐Wan Ryu, Sungho Kim, Non-volatile MemoryElectrical EngineeringBulk FinfetMulti-functioning NvmEngineering	2008	11

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