Non-volatile memory using graphene oxide for flexible electronics

Abstract

A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 nm thick GO shows On/Off current ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> . In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.