Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa, M. Tuominen, M. Naili, +4

Journal of Applied Physics

SemiconductorsTrap-assisted TunnelingElectrical EngineeringSemiconductor TechnologyZro2 Stack +11

Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

V. V. Afanas’ev, Michel Houssa, A. Stesmans, +1

Journal of Applied Physics

Materials ScienceOxide HeterostructuresZro2 LayersEngineeringMetal/al2o3 Contacts +12

Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Michel Houssa, V. V. Afanas’ev, A. Stesmans, +1

Applied Physics Letters

SemiconductorsFixed Charge DensityElectrical EngineeringSemiconductor DeviceNegative Fixed Charge +12

The Etching Mechanisms of SiO2 in Hydrofluoric Acid

Steven Verhaverbeke, Ivo Teerlinck, Chris Vinckier, +3

Journal of The Electrochemical Society

Materials EngineeringChemical EngineeringEngineeringNew ModelMicrofabrication +11

Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

V. V. Afanas’ev, Michel Houssa, A. Stesmans, +1

Applied Physics Letters

Materials ScienceMaterials EngineeringSemiconductorsElectron Energy BarriersEngineering +11

Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown

Michel Houssa, T. Nigam, Paul Mertens, +1

Journal of Applied Physics

Device ModelingElectrical EngineeringEngineeringUltrathin Gate OxidesPower Law +9

Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

Michel Houssa, Geoffrey Pourtois, Matty Caymax, +4

Applied Physics Letters

EngineeringMagnetic ResonanceSoft MatterGe Band GapElectronic Structure +21

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Eileen O’Connor, Scott Monaghan, R. D. Long, +9

Applied Physics Letters

EngineeringAtomic LayerInterconnect (Integrated Circuits)Semiconductor DeviceSemiconductors +15

Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors

Michel Houssa, T. Nigam, Paul Mertens, +1

Applied Physics Letters

EngineeringNanoelectronicsNonlinear ConductorsSoft BreakdownPercolation Theory +15

Interface engineering for Ge metal-oxide–semiconductor devices

A. Dimoulas, D.P. Brunco, S. Ferrari, +12

Thin Solid Films

Oxide HeterostructuresEngineeringOxide ElectronicsInterface EngineeringOxide Semiconductors +3