M. M. Heyns

Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa, M. Tuominen, M. Naili et al. · Journal of Applied Physics · 2000 · 353 citations

Engineering, Electrical Engineering, Materials Science +17

Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

V. V. Afanas’ev, Michel Houssa, A. Stesmans et al. · Journal of Applied Physics · 2002 · 207 citations

Natural Sciences, Materials Engineering, Materials Science +16

Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Michel Houssa, V. V. Afanas’ev, A. Stesmans et al. · Applied Physics Letters · 2000 · 193 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The Etching Mechanisms of SiO2 in Hydrofluoric Acid

Steven Verhaverbeke, Ivo Teerlinck, Chris Vinckier et al. · Journal of The Electrochemical Society · 1994 · 141 citations

Natural Sciences, Chemistry, Materials Science +14

Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

V. V. Afanas’ev, Michel Houssa, A. Stesmans et al. · Applied Physics Letters · 2001 · 132 citations

Natural Sciences, Materials Science, Physics +15