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The Etching Mechanisms of SiO2 in Hydrofluoric Acid
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1994
Year
Materials EngineeringChemical EngineeringEngineeringNew ModelMicrofabricationSurface ScienceApplied PhysicsPhysical ChemistrySemiconductor Device FabricationDifferent EquilibriaDifferent SpeciesChemistryPlasma EtchingSilicon On InsulatorEtching MechanismsChemical Kinetics
The different equilibria in and solutions are examined and the etching reaction of is investigated as a function of the different species present in the solution. A new model for the etching mechanism of is developed based on the existence of the dimer of , .