G. A. Kachurin

Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

G. A. Kachurin, I. E. Tyschenko, N.A. Pazdnikov et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 68 citations

Materials Science, Pulse Annealing, Ion Implantation +10

Light particle irradiation effects in Si nanocrystals

G. A. Kachurin, M.-O. Ruault, A.K. Gutakovsky et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 37 citations

Photoluminescence, Engineering, Nanotechnology +5

Flash lamp annealing of arsenic implanted silicon

R. Klabes, J. Matthäi, M. Voelskow et al. · physica status solidi (a) · 1981 · 31 citations

Engineering, Optoelectronic Devices, Integrated Circuits +17

Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

G. A. Kachurin, N.A. Pazdnikov, A. F. Leier et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 27 citations

Materials Science, Transient Preheating, Ion Implantation +10

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

G. A. Kachurin, S. G. Cherkova, V. G. Kesler et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2004 · 26 citations

Materials Science, Ion Implantation, Engineering +10