G. A. Kachurin - Concepedia

Author

G. A. Kachurin

Institute of Semiconductor Physics

Also Known As

G A Kachurin, G. A. KACHURIN, G. A. Kachurin, G.A Kachurin, G.A. Kachurin, G.A. Kachurin,, Grigoriy A. Kachurin

Publications

625

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductor Physics Russian Academy of Sciences Helmholtz-Zentrum Dresden-Rossendorf Laser Zentrum Hannover Yaroslav-the-Wise Novgorod State University

About

G. A. Kachurin is an author at Institute of Semiconductor Physics specializing in applied physics, optoelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	14	331
2	Applied Physics	11	15	342
3	Materials Science	11	11	267
4	Chemistry	1	1	21
5	Materials Engineering	1	1	11

G. A. Kachurin

Publications

475

Citations

H-Index

Page 1

	Year	Citations
Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing G. A. Kachurin, I. E. Tyschenko, N.A. Pazdnikov, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials SciencePulse AnnealingIon ImplantationEngineeringPhotoluminescence	1997	68
Light particle irradiation effects in Si nanocrystals G. A. Kachurin, M.-O. Ruault, A.K. Gutakovsky, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms PhotoluminescenceEngineeringNanotechnologyApplied PhysicsSi Nanocrystals	1999	37
Flash lamp annealing of arsenic implanted silicon R. Klabes, J. Matthäi, M. Voelskow, physica status solidi (a) EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductors	1981	31
Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating G. A. Kachurin, N.A. Pazdnikov, A. F. Leier, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceTransient PreheatingIon ImplantationEngineeringPhotoluminescence	1997	27
Implantation of P ions in SiO2 layers with embedded Si nanocrystals G. A. Kachurin, S. G. Cherkova, V. G. Kesler, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringNanomaterialsNanotechnology	2004	26
Low-frequency Raman scattering from Si/Ge nanocrystals in different matrixes caused by acoustic phonon quantization Venu Mankad, Sanjeev K. Gupta, Prafulla K. Jha, Journal of Applied Physics Acoustic Phonon QuantizationEngineeringAcoustic MetamaterialSurface-enhanced Raman ScatteringNanoelectronics	2012	24
Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals G. A. Kachurin, S. G. Cherkova, D. Marín, Semiconductors	2006	22
A study of the blue photoluminescence emission from thermally-grown, Si+-implanted SiO2 films after short-time annealing W. Skorupa, R.A. Yankov, L. Rebohle, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials SciencePhotoluminescenceEngineeringBlue Photoluminescence EmissionSi+-implanted Sio2 Films	1996	21
Formation of light-emitting Si nanostructures in SiO<sub>2</sub>by pulsed anneals G. A. Kachurin, S. G. Cherkova, D. V. Marin, Nanotechnology EngineeringThin SioOptoelectronic DevicesChemistrySilicon On Insulator	2008	21
XPS study of ion‐beam‐assisted formation of Si nanostructures in thin SiO <sub>2</sub> layers V. G. Kesler, S. G. Yanovskaya, G. A. Kachurin, Surface and Interface Analysis	2002	19

Page 1