I. E. Tyschenko - Concepedia

Author

I. E. Tyschenko

Institute of Semiconductor Physics ORCID

Also Known As

I E Tyschenko, I. E. TYSCHENKO, I. E. Tyschenko, I. Tyschenko, I.E Tyschenko, I.E. Tyschenko, I. E. Tyschenko, IPP SB RAS, Ida E. Tyschenko, Ida Tyschenko

137

Publications

855

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductor Physics Helmholtz-Zentrum Dresden-Rossendorf Technische Universität Dresden Russian Academy of Sciences Institute of Electron Technology

About

I. E. Tyschenko is an author at Institute of Semiconductor Physics specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	582
2	Applied Physics	13	16	582
3	Materials Science	11	14	545
4	Physics	5	5	249
5	Electrical Engineering	3	3	209

I. E. Tyschenko

Publications

663

Citations

H-Index

Page 1

	Year	Citations
Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers L. Rebohle, J. von Borany, R.A. Yankov, Applied Physics Letters EngineeringStrong BlueOptoelectronic DevicesIntegrated CircuitsEl Spectrum	1997	184
Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films W. Skorupa, R.A. Yankov, I. E. Tyschenko, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsLuminescence Property	1996	108
Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing G. A. Kachurin, I. E. Tyschenko, N.A. Pazdnikov, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials SciencePulse AnnealingIon ImplantationEngineeringPhotoluminescence	1997	68
Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating G. A. Kachurin, N.A. Pazdnikov, A. F. Leier, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceTransient PreheatingIon ImplantationEngineeringPhotoluminescence	1997	27
Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing I. E. Tyschenko, L. Rebohle, R.A. Yankov, Applied Physics Letters Short-wavelength Visible PhotoluminescenceOptical MaterialsEngineeringOptoelectronic DevicesSilicon On Insulator	1998	26
Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers L. Rebohle, J. von Borany, W. Skorupa, Journal of Luminescence Ii-vi SemiconductorPhotoluminescenceEngineeringElectroluminescence InvestigationsApplied Physics	1998	22
A study of the blue photoluminescence emission from thermally-grown, Si+-implanted SiO2 films after short-time annealing W. Skorupa, R.A. Yankov, L. Rebohle, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials SciencePhotoluminescenceEngineeringBlue Photoluminescence EmissionSi+-implanted Sio2 Films	1996	21
Carrier transport and dielectric permittivity of SiO2 films containing ion-beam synthesized InSb nanocrystals Paweł Żukowski, Tomasz N. Kołtunowicz, Karolina Czarnacka, Journal of Alloys and Compounds Materials ScienceEpitaxial GrowthEngineeringNanomaterialsNanotechnology	2020	19
Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure A. Misiuk, B. Surma, B. Surma, physica status solidi (b) Materials ScienceSemiconductorsOptical MaterialsLuminescence PropertiesEngineering	1999	17
The effect of annealing under hydrostatic pressure on the visible photoluminescence from si+-ion implanted SiO2 films I. E. Tyschenko, L. Rebohle, R.A. Yankov, Journal of Luminescence Materials ScienceHydrostatic PressureEpitaxial GrowthEngineeringPhotoluminescence	1998	16

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