A. F. Leier

Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

G. A. Kachurin, I. E. Tyschenko, N.A. Pazdnikov et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 68 citations

Materials Science, Pulse Annealing, Ion Implantation +10

Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

G. A. Kachurin, N.A. Pazdnikov, A. F. Leier et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 27 citations

Materials Science, Transient Preheating, Ion Implantation +10

XPS study of ion‐beam‐assisted formation of Si nanostructures in thin SiO ₂ layers

V. G. Kesler, S. G. Yanovskaya, G. A. Kachurin et al. · Surface and Interface Analysis · 2002 · 19 citations

Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions

G. A. Kachurin, A. F. Leier, I. E. Tyschenko et al. · Semiconductors · 1998 · 14 citations

The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

G. A. Kachurin, D. I. Tetelbaum, D. V. Marin et al. · Semiconductors · 2005 · 12 citations