S. G. Yanovskaya

Light particle irradiation effects in Si nanocrystals

G. A. Kachurin, M.-O. Ruault, A.K. Gutakovsky et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 37 citations

Photoluminescence, Engineering, Nanotechnology +5

XPS study of ion‐beam‐assisted formation of Si nanostructures in thin SiO ₂ layers

V. G. Kesler, S. G. Yanovskaya, G. A. Kachurin et al. · Surface and Interface Analysis · 2002 · 19 citations

The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers

G. A. Kachurin, S. G. Yanovskaya, M.-O. Ruault et al. · Semiconductors · 2000 · 18 citations

The effect of implantation of P ions on the photoluminescence of Si nanocrystals in SiO2 layers

G. A. Kachurin, S. G. Yanovskaya, D. I. Tetelbaum · Semiconductors · 2003 · 12 citations

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation

D. I. Tetelbaum, Sergey A. Trushin, Alexey Mikhaylov et al. · Physica E Low-dimensional Systems and Nanostructures · 2003 · 11 citations

Materials Science, Additional Phosphorus Implantation, Ion Implantation +9