T. Jenkins

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 535 citations

Wide-bandgap Semiconductor, Record Performance, Electrical Engineering +10

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations

Wide-bandgap Semiconductor, Ultrahigh Performance, Electrical Engineering +10

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

Artificial neural networks for fast and accurate EM-CAD of microwave circuits

G.L. Creech, Bhashkar Paul, C. Lesniak et al. · IEEE Transactions on Microwave Theory and Techniques · 1997 · 138 citations

Microwave Circuits, Electrical Engineering, Physical Design (Electronics) +15

Microwave performance of AlGaN/GaN inverted MODFET's

Özgür Aktaş, Z. Fan, A. Botchkarev et al. · IEEE Electron Device Letters · 1997 · 105 citations

Electrical Engineering, Microwave Performance, Engineering +10