T. Jenkins - Concepedia

Author

T. Jenkins

United States Air Force Research Laboratory

Also Known As

T J Jenkins, T Jenkins, T. J. JENKINS, T. J. Jenkins, T. Jenkins, T.J. Jenkins, Thomas J. Jenkins, Thomas Jenkins, Thomas L. Jenkins

108

Publications

2.6K

Citations

H-Index

Concepts

All Affiliations

United States Air Force Research Laboratory University of Florida Wright-Patterson Air Force Base University of Southampton TU Wien

About

T. Jenkins is an author at United States Air Force Research Laboratory specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	40	2.4K
2	Applied Physics	18	28	1.9K
3	Medicine	4	4	123
4	Education	1	1	10
5	Natural Sciences	1	1	69

T. Jenkins

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard, K. Doverspike, W.L. Pribble, IEEE Electron Device Letters Wide-bandgap SemiconductorRecord PerformanceElectrical EngineeringEngineeringRf Semiconductor	1999	535
High Al-content AlGaN/GaN MODFETs for ultrahigh performance Yifeng Wu, B.P. Keller, P. Fini, IEEE Electron Device Letters Wide-bandgap SemiconductorUltrahigh PerformanceElectrical EngineeringEngineeringNanoelectronics	1998	280
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation R. Mehandru, B. Luo, J. Kim, Applied Physics Letters SemiconductorsOxide HeterostructuresElectrical EngineeringElectronic DevicesGate Oxide	2003	141
Artificial neural networks for fast and accurate EM-CAD of microwave circuits G.L. Creech, Bhashkar Paul, C. Lesniak, IEEE Transactions on Microwave Theory and Techniques Microwave CircuitsElectrical EngineeringPhysical Design (Electronics)EngineeringArtificial Neural Networks	1997	138
Microwave performance of AlGaN/GaN inverted MODFET's Özgür Aktaş, Z. Fan, A. Botchkarev, IEEE Electron Device Letters Electrical EngineeringMicrowave PerformanceEngineeringRf SemiconductorInverted Algan/gan Modfet	1997	105
Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz Yifeng Wu, B.P. Keller, S. Keller, IEEE Electron Device Letters /Spl Aring/Wide-bandgap SemiconductorElectrical Engineering50-Ghz F/sub T/Engineering	1997	97
Wet Chemical Digital Etching of GaAs at Room Temperature G. DeSalvo, C. Bozada, J. Ebel, Journal of The Electrochemical Society SemiconductorsRoom TemperatureElectrical EngineeringEngineeringMicrofabrication	1996	86
High Capacity Rate Capable Aerosol Jet Printed Li‐Ion Battery Cathode L. Jay Deiner, T. Jenkins, Amber S. Powell, Advanced Engineering Materials EngineeringBattery TechnologyAerosol Jet DepositionChemical EngineeringPulse Power	2019	71
Toughness and damage susceptibility in human cortical bone is proportional to mechanical inhomogeneity at the osteonal-level Orestis L. Katsamenis, T. Jenkins, Philipp J. Thurner Bone MechanobiologyKinesiologyBone HealthOrthopaedic SurgeryEngineering	2015	70
Transient characteristics of gan-based heterostructure field-effect transistors E. Kohn, I. Daumiller, M. Kunze, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectronic TransientsElectrical EngineeringCharge InstabilitiesEngineering	2003	70

Page 1