T. Kosel

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V

Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

Self-aligned InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb vertical tunnel FETs

Guangle Zhou, Yeqing Lu, R. Li et al. · 2011 · 20 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Temperature dependence of the threshold energy for Frenkel pair production in copper

R. Drosd, T. Kosel, J. Washburn · Journal of Nuclear Materials · 1978 · 17 citations

Materials Science, Engineering, Physics +9

SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

Lars‐Erik Wernersson, Saifudeen Kabeer, Vilma Zela et al. · Electronics Letters · 2004 · 14 citations

Electrical Engineering, Engineering, Physics +14

A unique photoemission method to measure semiconductor heterojunction band offsets

Q. Zhang, Ranfeng Li, Ru Yan et al. · Applied Physics Letters · 2013 · 13 citations · Full text

Semiconductors, Visible-ultraviolet Internal Photoemission, Electrical Engineering +15