Lars‐Erik Wernersson

Vertical high-mobility wrap-gated InAs nanowire transistor

Tomas Bryllert, Lars‐Erik Wernersson, L. E. Fröberg et al. · IEEE Electron Device Letters · 2006 · 338 citations

Engineering, Electrical Engineering, Materials Science +17

Giant, Level-Dependent <i>g</i> Factors in InSb Nanowire Quantum Dots

Henrik A. Nilsson, Philippe Caroff, Claes Thelander et al. · Nano Letters · 2009 · 255 citations

Natural Sciences, Physics, Condensed Matter Physics +14

III–V compound semiconductor transistors—from planar to nanowire structures

Heike Riel, Lars‐Erik Wernersson, M. Hong et al. · MRS Bulletin · 2014 · 231 citations

Engineering, Electrical Engineering, Materials Science +10

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Claes Thelander, L.E. FrobergFroberg, Carl Rehnstedt et al. · IEEE Electron Device Letters · 2008 · 178 citations

Engineering, Electrical Engineering, Materials Science +17

High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy

Philippe Caroff, Jakob Birkedal Wagner, Kimberly A. Dick et al. · Small · 2008 · 170 citations

Natural Sciences, Materials Engineering, Materials Science +15