Carl Rehnstedt

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Claes Thelander, L.E. FrobergFroberg, Carl Rehnstedt et al. · IEEE Electron Device Letters · 2008 · 178 citations

Semiconductors, Device Modeling, Electrical Engineering +15

Development of a Vertical Wrap-Gated InAs FET

Claes Thelander, Carl Rehnstedt, Linus Fröberg et al. · IEEE Transactions on Electron Devices · 2008 · 99 citations

Electrical Engineering, Engineering, Nanowire Position Control +10

Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

Carl Rehnstedt, Thomas Mårtensson, Claes Thelander et al. · IEEE Transactions on Electron Devices · 2008 · 48 citations

Electrical Engineering, Metal Seed Particles, Engineering +9

Heterostructure Barriers in Wrap Gated Nanowire FETs

Linus Fröberg, Carl Rehnstedt, Claes Thelander et al. · IEEE Electron Device Letters · 2008 · 27 citations

Wide-bandgap Semiconductor, Engineering, Insulator-gate Field-effect Transistors +16

Drive current and threshold voltage control in vertical InAs wrap-gate transistors

Carl Rehnstedt, Claes Thelander, Linus Fröberg et al. · Electronics Letters · 2008 · 14 citations

Wire Diameter, Electrical Engineering, Engineering +12