L. E. Fröberg

Vertical high-mobility wrap-gated InAs nanowire transistor

Tomas Bryllert, Lars‐Erik Wernersson, L. E. Fröberg et al. · IEEE Electron Device Letters · 2006 · 334 citations

Electrical Engineering, Semiconductor Device, Engineering +10

Diameter-dependent growth rate of InAs nanowires

L. E. Fröberg, W. Seifert, Jonas Johansson · Physical Review B · 2007 · 160 citations

Materials Science, Epitaxial Growth, Nanoscale System +15

Tunable effective<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>factor in InAs nanowire quantum dots

Mats Björk, Andreas Fuhrer, Adam E. Hansen et al. · Physical Review B · 2005 · 143 citations · Full text

The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursors

Claes Thelander, Kimberly A. Dick, Magnus T. Borgström et al. · Nanotechnology · 2010 · 91 citations

Crystal Structure, Nanosheet, Engineering +17

Surface diffusion effects on growth of nanowires by chemical beam epitaxy

Ann Persson, L. E. Fröberg, S. Jeppesen et al. · Journal of Applied Physics · 2007 · 87 citations

Materials Science, Nanoscale Science, Engineering +13