H. Ho

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

Scaling deep trench based eDRAM on SOI to 32nm and Beyond

G. Wang, D. Anand, Nauman Zafar Butt et al. · 2009 · 45 citations

Electrical Engineering, Engineering, Vlsi Design +9

Integration of trench DRAM into a high-performance 0.18 μm logic technology with copper BEOL

S. Crowder, R. Hannon, H. Ho et al. · 2002 · 23 citations

Electrical Engineering, Engineering, Vlsi Design +15

Creation and interaction with large-scale domain-specific knowledge bases

S. Bharadwaj, Laura Chiticariu, Marina Danilevsky et al. · Proceedings of the VLDB Endowment · 2017 · 17 citations

Engineering, Knowledge Extraction, Semantic Technology +18

Large RF-controlled voltage steps in DC SQUIDs applicable to voltage standards and sources

G.S. Lee, H. Ho, R. Ruby et al. · IEEE Transactions on Applied Superconductivity · 1993 · 16 citations

Engineering, Current Height, Radio Frequency +20