A. Toffoli

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Emerging Memory Technology, Phase-change Memories +17

Advances in 3D CMOS sequential integration

P. Batude, M. Vinet, A. Pouydebasque et al. · 2009 · 114 citations

Engineering, Vlsi Design, Sequential Cmos Integration +17

Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Sylvain Barraud, V. Lapras, Marie-Pierre Samson et al. · 2016 · 108 citations · Full text

Engineering, Inner Spacer, Integrated Circuits +16

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

F. Andrieu, O. Weber, J. Mazurier et al. · 2010 · 103 citations

Engineering, Vlsi Design, Integrated Circuits +16

Resistive Memories for Ultra-Low-Power embedded computing design

Elisa Vianello, Olivier Thomas, G. Molas et al. · 2014 · 92 citations

Hardware Security, Fixed-logic Ic Design, Electrical Engineering +15