S. L. Hsu

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Chih‐Chia Cheng, Jing-Wei Lin, T. Wang et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 34 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide

J.F. Chen, Kuo-Ming Wu, Kaung-Wan Lin et al. · 2005 · 33 citations

Electrical Engineering, Engineering, Hardware Reliability +11

The Influence of NBL Layout and LOCOS Space on Component ESD and System Level ESD for HV-LDMOS

Jian‐Hsing Lee, S.H. Chen, Yu‐Ting Tsai et al. · 2007 · 27 citations

Electrical Engineering, Engineering, Applied Physics +8

Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors

Kehuey Wu, J. F. Chen, Yan‐Kuin Su et al. · Applied Physics Letters · 2006 · 22 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Investigation of Hot Carrier Degradation Modes in LDMOS by using a Novel Three-Region Charge Pumping Technique

Chih‐Chia Cheng, Kaihui Tu, Tahui Wang et al. · 2006 · 21 citations

Electrical Engineering, Engineering, Beak Region +6