N. M. Atkinson - Concepedia

Author

N. M. Atkinson

Vanderbilt University

Also Known As

N. Atkinson, N. M. Atkinson, Nicholas Atkinson, Nicholas M. Atkinson

Publications

561

Citations

H-Index

Concepts

All Affiliations

Vanderbilt University Naval Sea Systems Command United States Military Academy University of Bath University of Saskatchewan

About

N. M. Atkinson is an author at Vanderbilt University specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	492
2	Electrical Engineering	12	12	396
3	Computer Engineering	8	8	313
4	Applied Physics	6	6	210
5	Education	1	1	50

N. M. Atkinson

Publications

492

Citations

H-Index

Page 1

	Year	Citations
Layout Technique for Single-Event Transient Mitigation via Pulse Quenching N. M. Atkinson, Arthur F. Witulski, W.T. Holman, IEEE Transactions on Nuclear Science EngineeringVlsi DesignLogic CellsComputer ArchitectureElectromagnetic Compatibility	2011	96
Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths Jonathan R. Ahlbin, Matthew J. Gadlage, N. M. Atkinson, IEEE Transactions on Device and Materials Reliability Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design	2011	56
Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS N. M. Atkinson, Jonathan R. Ahlbin, Arthur F. Witulski, IEEE Transactions on Nuclear Science Device ModelingLow-power ElectronicsElectrical EngineeringSe Cross SectionEngineering	2011	54
On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology T. D. Loveless, J. S. Kauppila, S. Jagannathan, IEEE Transactions on Nuclear Science EngineeringVlsi DesignMeasurementOn-chip MeasurementEducation	2012	50
Finite element method for 3D eddy current flow in thin conducting sheets D. Rodger, N. M. Atkinson IEE Proceedings A Physical Science Measurement and Instrumentation Management and Education Reviews Numerical AnalysisFinite Element MethodElectrical EngineeringEddy Current FlowEngineering	1988	43
Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS N. J. Gaspard, Arthur F. Witulski, N. M. Atkinson, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringWell StructureEngineeringVlsi Design	2011	34
Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients Jonathan R. Ahlbin, N. M. Atkinson, Matthew J. Gadlage, IEEE Transactions on Nuclear Science Electrical EngineeringPulse WidthEngineeringElectronic EngineeringSingle-event Transients	2011	29
Differential Charge Cancellation (DCC) Layout as an RHBD Technique for Bulk CMOS Differential Circuit Design Raymond W. Blaine, N. M. Atkinson, J. S. Kauppila, IEEE Transactions on Nuclear Science Electrical EngineeringPhysical Design (Electronics)EngineeringCircuit SystemCircuit Design	2012	28
Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions J. A. Maharrey, R. C. Quinn, T. D. Loveless, IEEE Transactions on Nuclear Science EngineeringSilicon On InsulatorIon ImplantationDevice VariantsSet Pulse Distributions	2013	26
RHBD Bias Circuits Utilizing Sensitive Node Active Charge Cancellation Raymond W. Blaine, Sarah E. Armstrong, J. S. Kauppila, IEEE Transactions on Nuclear Science Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignBias Circuit	2011	21

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