Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Stefan P. Svensson, D. Donetsky, Dinghui Wang, +3

Journal of Crystal Growth

Materials ScienceIi-vi SemiconductorLayer SuperlatticeEngineeringApplied Physics +6

Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

Jinbo Kuang, P.J. Tasker, G.W. Wang, +5

IEEE Electron Device Letters

Electrical EngineeringElectronic DevicesMicrowave PerformanceEngineeringRf Semiconductor +8

Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic

Robert Potter, Amir A. Lakhani, D. M. Beyea, +3

Applied Physics Letters

Electrical EngineeringThree-state LogicEngineeringQuantum ComputingPhysics +13

Molecular beam epitaxy control and photoluminescence properties of InAsBi

Stefan P. Svensson, H. Hier, Wendy L. Sarney, +3

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Materials ScienceLocal Phase SeparationOverpressure RatioThick Inasbi LayersEngineering +9

Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device

Amir A. Lakhani, Robert Potter, H. Hier

Electronics Letters

Conventional Parity CheckerElectrical EngineeringIntegrated DiodeEngineering11-Bit Parity Checker +5

High-performance InAlAs/InGaAs HEMTs and MESFETs

A. Fathimulla, J.R. ABRAHAMS, Tom Loughran, +1

IEEE Electron Device Letters

Heterostructure Inalas/ingaas HemtsElectrical EngineeringEngineeringMicrowave PerformanceElectronic Engineering +4

Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures

Robert Potter, Amir A. Lakhani, H. Hier

Journal of Applied Physics

EngineeringLogic StatesTunneling StructuresSemiconductor DeviceQuantum Computing +15

Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs 1-X Sb X alloys

Gregory Belenky, G. Kipshidze, D. Donetsky, +6

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Wide-bandgap SemiconductorOptical MaterialsEngineeringBuffer LayersCarrier Lifetime +14

Bias circuit effects on the current-voltage characteristic of double-barrier tunneling structures: Experimental and theoretical results

C. Y. Belhadj, K. P. Martin, S. Ben Amor, +5

Applied Physics Letters

EngineeringTheoretical ResultsSemiconductor DeviceTunneling MicroscopyNanoelectronics +15

Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices

Youxi Lin, Ding Wang, D. Donetsky, +6

Journal of Electronic Materials

Materials ScienceEngineeringPhysicsApplied PhysicsCondensed Matter Physics +4