H. Hier

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Stefan P. Svensson, D. Donetsky, Dinghui Wang et al. · Journal of Crystal Growth · 2011 · 129 citations

Materials Science, Ii-vi Semiconductor, Layer Superlattice +8

Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

Jinbo Kuang, P.J. Tasker, G.W. Wang et al. · IEEE Electron Device Letters · 1988 · 66 citations

Electrical Engineering, Electronic Devices, Microwave Performance +10

Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic

Robert Potter, Amir A. Lakhani, D. M. Beyea et al. · Applied Physics Letters · 1988 · 51 citations

Electrical Engineering, Three-state Logic, Engineering +15

Molecular beam epitaxy control and photoluminescence properties of InAsBi

Stefan P. Svensson, H. Hier, Wendy L. Sarney et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 48 citations

Materials Science, Local Phase Separation, Overpressure Ratio +11

Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device

Amir A. Lakhani, Robert Potter, H. Hier · Electronics Letters · 1988 · 45 citations

Conventional Parity Checker, Electrical Engineering, Integrated Diode +7