Molecular beam epitaxy control and photoluminescence properties of InAsBi

Abstract

Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra.