D. Donetsky

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

D. Donetsky, Stefan P. Svensson, L. E. Vorobjev et al. · Applied Physics Letters · 2009 · 143 citations

Engineering, Materials Engineering, Materials Science +17

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Stefan P. Svensson, D. Donetsky, Dinghui Wang et al. · Journal of Crystal Growth · 2011 · 129 citations

Natural Sciences, Materials Science, Physics +17

Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials

D. Donetsky, Gregory Belenky, Stefan P. Svensson et al. · Applied Physics Letters · 2010 · 125 citations

Natural Sciences, Materials Science, Physics +14

Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials

I. Vurgaftman, Gregory Belenky, Youxi Lin et al. · Applied Physics Letters · 2016 · 91 citations

Natural Sciences, Materials Science, Physics +17

High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%

L. Shterengas, Gregory Belenky, Mikhail V. Kisin et al. · Applied Physics Letters · 2007 · 82 citations

Engineering, Electrical Engineering, Materials Science +17