L. E. Vorobjev - Concepedia

Author

L. E. Vorobjev

Peter the Great St. Petersburg Polytechnic University

Also Known As

L E Vorobjev, L Vorobjev, L. E. VOROBJEV, L. E. Vorobjev, L.E Vorobjev, L.E. Vorobjev, Leonid E Vorobjev, Leonid E. Vorobjev, Leonid Vorobjev, VOROBJEV, Leonid

183

Publications

950

Citations

H-Index

Concepts

All Affiliations

Peter the Great St. Petersburg Polytechnic University Ioffe Institute Institute for Physics of Microstructures Physico-Technical Institute Stony Brook University

About

L. E. Vorobjev is an author at Peter the Great St. Petersburg Polytechnic University specializing in applied physics, optoelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	19	544
2	Applied Physics	13	19	544
3	Electrical Engineering	7	7	280
4	Natural Sciences	2	2	38
5	Materials Science	2	2	36

L. E. Vorobjev

Publications

735

Citations

H-Index

Page 1

	Year	Citations
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures D. Donetsky, Stefan P. Svensson, L. E. Vorobjev, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringIi-vi SemiconductorPl Kinetics	2009	141
Circular photogalvanic effect induced by monopolar spin orientation in <i>p</i>-GaAs/AlGaAs multiple-quantum wells Sergey Ganichev, Hermann Ketterl, W. Prettl, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsSpintronicsCircular Photogalvanic EffectEngineering	2000	93
Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure V. A. Shalygin, M. D. Moldavskaya, M. Ya. Vinnichenko, Journal of Applied Physics Thz PhotonicsTerahertz TechnologyExcited 2DEngineeringTerahertz Photonics	2019	41
Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTerahertz ElectroluminescenceOptoelectronic DevicesSemiconductors	2009	27
Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, Journal of Applied Physics Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2011	26
Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment H.A. Sarkisyan, David B. Hayrapetyan, Lyudvig S. Petrosyan, Nanomaterials Quantum ScienceHole GasEngineeringGe/si Quantum DotsPhysics	2019	26
Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation G A Melentev, V. A. Shalygin, L. E. Vorobjev, Journal of Applied Physics PlasmonicsReflectivity SpectrumOptical MaterialsEngineeringMagnetoplasmonics	2016	25
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm A. V. Babichev, Adel Bousseksou, N. A. Pikhtin, Semiconductors	2016	25
Terahertz luminescence in strained GaAsN:Be layers under strong electric fields V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringGaasn∕gaas MicrostructuresTerahertz Spectroscopy	2007	23
Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping A. Yu. Egorov, A. V. Babichev, L. Ya. Karachinsky, Semiconductors	2015	21

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