L. E. Vorobjev

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

D. Donetsky, Stefan P. Svensson, L. E. Vorobjev et al. · Applied Physics Letters · 2009 · 141 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14

Circular photogalvanic effect induced by monopolar spin orientation in <i>p</i>-GaAs/AlGaAs multiple-quantum wells

Sergey Ganichev, Hermann Ketterl, W. Prettl et al. · Applied Physics Letters · 2000 · 93 citations · Full text

Wide-bandgap Semiconductor, Photonics, Spintronics +14

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

V. A. Shalygin, M. D. Moldavskaya, M. Ya. Vinnichenko et al. · Journal of Applied Physics · 2019 · 41 citations · Full text

Thz Photonics, Terahertz Technology, Excited 2D +20

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

V. A. Shalygin, L. E. Vorobjev, D. A. Firsov et al. · Journal of Applied Physics · 2009 · 27 citations · Full text

Wide-bandgap Semiconductor, Engineering, Terahertz Electroluminescence +17

Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field

V. A. Shalygin, L. E. Vorobjev, D. A. Firsov et al. · Journal of Applied Physics · 2011 · 26 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +15