Journal of Applied Physics · 2009 · 27 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsDopingLuminescent MaterialsOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsElectroluminescenceElectron DonorsExperimental StudiesFourier TransformGallium Nitride (Gan) MaterialsGround StatesPhotoluminescence SpectroscopyTerahertz Spectral Analysis
We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5×1016 to 3.4×1018 cm−3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.
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Activation energies of Si donors in GaN
Werner Götz, N. M. Johnson, C. Chen et al. · Applied Physics Letters · 1996 · 482 citations