Mikhail V. Kisin

High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%

L. Shterengas, Gregory Belenky, Mikhail V. Kisin et al. · Applied Physics Letters · 2007 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

Semi‐polar nitride surfaces and heterostructures

A. Strittmatter, John E. Northrup, N. M. Johnson et al. · physica status solidi (b) · 2010 · 72 citations

Engineering, Materials Engineering, Materials Science +17

Continuous-wave room temperature operated 3.0μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers

Takashi Hosoda, Gregory Belenky, L. Shterengas et al. · Applied Physics Letters · 2008 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Boundary-condition problem in the Kane model

Mikhail V. Kisin, Boris Gelmont, Serge Luryi · Physical review. B, Condensed matter · 1998 · 38 citations

Natural Sciences, Materials Science, Physics +16

Phonon enhanced inverse population in asymmetric double quantum wells

Michael A. Stroscio, Mikhail V. Kisin, Gregory Belenky et al. · Applied Physics Letters · 1999 · 31 citations

Engineering, Physics, Condensed Matter Physics +12