D. M. Beyea

Characteristics of light-emitting diodes based on GaN <i>p</i>-<i>n</i> junctions grown by plasma-assisted molecular beam epitaxy

R. P. Vaudo, I. D. Goepfert, T. D. Moustakas et al. · Journal of Applied Physics · 1996 · 60 citations

Engineering, Annealed Leds Turn, V. Electroluminescence +16

Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic

Robert Potter, Amir A. Lakhani, D. M. Beyea et al. · Applied Physics Letters · 1988 · 51 citations

Electrical Engineering, Three-state Logic, Engineering +15

Temperature profile along the cavity axis of high power quantum well lasers during operation

F. P. Dabkowski, Albert Chin, P. Gavrilovič et al. · Applied Physics Letters · 1994 · 47 citations

W Algaas, Engineering, Laser Science +18

High power AlGaAs-GaAs visible diode lasers

P. Tihanyi, F. Jain, Michael J. Robinson et al. · IEEE Photonics Technology Letters · 1994 · 26 citations

High-power Visible Laser, Photonics, Electrical Engineering +15

Al _0.48 In _0.52 As/Ga _0.47 In _0.53 As resonant tunnelling diodes with large current peak/valley ratio

Amir A. Lakhani, Robert Potter, D. M. Beyea et al. · Electronics Letters · 1988 · 25 citations