F. Nouri

NMOS drive current reduction caused by transistor layout and trench isolation induced stress

G. Scott, J. Lutze, F. Nouri et al. · 2003 · 125 citations

Engineering, Electrical Engineering, Microelectronics +16

On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

Dhanoop Varghese, Dipankar Saha, Souvik Mahapatra et al. · 2006 · 120 citations

Engineering, Electrical Engineering, Physics +17

pMOSFET with 200% mobility enhancement induced by multiple stressors

L. Washington, F. Nouri, S. Thirupapuliyur et al. · IEEE Electron Device Letters · 2006 · 68 citations

Engineering, Electrical Engineering, Materials Science +13

Exploring the limits of stress-enhanced hole mobility

Lee Smith, Victor Moroz, Geert Eneman et al. · IEEE Electron Device Letters · 2005 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Geert Eneman, Peter Verheyen, R. Rooyackers et al. · IEEE Transactions on Electron Devices · 2006 · 57 citations

Engineering, Electrical Engineering, Materials Science +13