E.C. Jones - Concepedia

Author

E.C. Jones

University of California, Berkeley ORCID

Also Known As

E Jones, E. C. Jones, E. Jones, E.C. Jones, Erin C Jones, Erin C. Jones, Erin Jones

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

University of California, Berkeley IBM (United States)IBM Research - Thomas J. Watson Research Center Kyoto University Lawrence Berkeley National Laboratory

About

E.C. Jones is an author at University of California, Berkeley specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	24	1.3K
2	Applied Physics	17	22	1.2K
3	Electrical Engineering	15	18	1.1K
4	Biomedical Engineering	2	2	53
5	Computer Engineering	2	2	124

E.C. Jones

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Extreme scaling with ultra-thin Si channel MOSFETs B. Doris, M. Ieong, T. Kanarsky, Electrical EngineeringEngineeringTechnology ScalingNanoelectronicsApplied Physics	2003	181
Electrical characterization of germanium p-channel MOSFETs Huiling Shang, H. Okorn-Schimdt, J. A. Ott, IEEE Electron Device Letters Electrical EngineeringGe MosfetsEngineeringNanoelectronicsThin Gate Stack	2003	170
High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric Huiling Shang, H. Schmidt, K. Chan, Electrical EngineeringGe MosfetsEngineeringRf SemiconductorNanoelectronics	2003	120
Shallow junction doping technologies for ULSI E.C. Jones, E. Ishida Materials Science and Engineering R Reports Electrical EngineeringEngineeringNanoelectronicsShallow JunctionApplied Physics	1998	120
Two gates are better than one [double-gate MOSFET process] P. M. Solomon, K.W. Guarini, Yifan Zhang, IEEE Circuits and Devices Magazine Dense Circuit LayoutsElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design	2003	81
Triple-self-aligned, planar double-gate MOSFETs: devices and circuits K.W. Guarini, P. M. Solomon, Y. Zhang, Electrical EngineeringGate UndercutEngineeringNor LogicNanoelectronics	2002	68
Non-linear processes in the gas cluster ion beam modification of solid surfaces Isao Yamada, Jiro Matsuo, Noriaki Toyoda, Materials Science and Engineering A Materials ScienceCluster ScienceIon ImplantationEngineeringPhysics	1998	63
Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantation E.C. Jones, N.W. Cheung IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringIon ImplantationEngineeringPlasma Electronics	1993	49
Thermal annealing characteristics of Si and Mg-implanted GaN thin films J. Chan, N.W. Cheung, Lawrence F. Schloss, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineering	1996	45
High performance double-gate device technology challenges and opportunities M. Ieong, H.‐S. Philip Wong, E. Nowak, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignNanoelectronics	2003	43

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