E.C. Jones

Extreme scaling with ultra-thin Si channel MOSFETs

B. Doris, M. Ieong, T. Kanarsky et al. · 2003 · 181 citations

Electrical Engineering, Engineering, Technology Scaling +8

Electrical characterization of germanium p-channel MOSFETs

Huiling Shang, H. Okorn-Schimdt, J. A. Ott et al. · IEEE Electron Device Letters · 2003 · 170 citations

Electrical Engineering, Ge Mosfets, Engineering +10

High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

Huiling Shang, H. Schmidt, K. Chan et al. · 2003 · 120 citations

Electrical Engineering, Ge Mosfets, Engineering +10

Shallow junction doping technologies for ULSI

E.C. Jones, E. Ishida · Materials Science and Engineering R Reports · 1998 · 120 citations

Electrical Engineering, Engineering, Nanoelectronics +4

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Dense Circuit Layouts, Electrical Engineering, Physical Design (Electronics) +11