A. Nanni

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Transactions on Electron Devices · 2014 · 188 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaN-Based Robust Low-Noise Amplifiers

Sergio Colangeli, Andrea Bentini, Walter Ciccognani et al. · IEEE Transactions on Electron Devices · 2013 · 141 citations · Full text

Engineering, Electrical Engineering, Analog Electronics +16

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Davide Bisi, Alessandro Chini, F. Soci et al. · IEEE Electron Device Letters · 2015 · 48 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

X-band GaN-HEMT LNA performance versus robustness trade-off

A. Bettidi, F. Corsaro, A. Cetronio et al. · 2009 · 48 citations

Engineering, Electrical Engineering, Microelectronics +16

A mixed-signal X-band SiGe multi-function control MMIC for phased array radar applications

D. Carosi, A. Bettidi, A. Nanni et al. · 2009 · 39 citations

Engineering, Electrical Engineering, Analog Electronics +16