Hailian Liang

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

Brice De Jaeger, M. Van Hove, D. Wellekens et al. · 2012 · 92 citations

Engineering, Electrical Engineering, Materials Science +14

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

X. Li, Nooshin Amirifar, Karen Geens et al. · 2019 · 82 citations

Engineering, Electrical Engineering, Microelectronics +16

High Holding Voltage SCR-LDMOS Stacking Structure With Ring-Resistance-Triggered Technique

Fei Ma, Bin Zhang, Yan Han et al. · IEEE Electron Device Letters · 2013 · 61 citations

Engineering, Electrical Engineering, Microelectronics +8

Design of a Gate Diode Triggered SCR for Dual-Direction High-Voltage ESD Protection

Hailian Liang, Qiang Xu, Ling Zhu et al. · IEEE Electron Device Letters · 2018 · 45 citations

Engineering, Electrical Engineering, Microelectronics +8

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

Niels Posthuma, Shuzhen You, Steve Stoffels et al. · 2018 · 36 citations

Engineering, Electrical Engineering, Materials Science +17