Siyu Liu

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Fuchun Jia, Xiaohua Ma, Ling Yang et al. · IEEE Transactions on Electron Devices · 2021 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma

Fuchun Jia, Xiaohua Ma, Ling Yang et al. · IEEE Electron Device Letters · 2022 · 23 citations

Engineering, Electrical Engineering, Physics +16

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V_<i>d</i> = 12 V

Jingshu Guo, Jiejie Zhu, Siyu Liu et al. · IEEE Electron Device Letters · 2023 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

Jiejie Zhu, Yingcong Zhang, Michael J. Uren et al. · Applied Physics Letters · 2020 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improvement of Electron Transport Property and on-Resistance in Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment

Jiejie Zhu, Siqi Jing, Xiaohua Ma et al. · IEEE Transactions on Electron Devices · 2020 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17