Jingshu Guo

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V_<i>d</i> = 12 V

Jingshu Guo, Jiejie Zhu, Siyu Liu et al. · IEEE Electron Device Letters · 2023 · 21 citations

Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

Yiwei Duan, Haixia Gao, Jingshu Guo et al. · Applied Physics Letters · 2021 · 18 citations

Materials Science, Aluminium Nitride, Electrical Engineering +13

Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing

Xuping Shen, Haixia Gao, Yiwei Duan et al. · Applied Physics Letters · 2021 · 16 citations

Aln Film, Engineering, Emerging Memory Technology +18

Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment

Siyu Liu, Jiejie Zhu, Jingshu Guo et al. · IEEE Electron Device Letters · 2022 · 14 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +13

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiN_<i>x</i>‐Based Resistive Random Access Memory

Jingshu Guo, Haixia Gao, Pengfei Jiang et al. · physica status solidi (a) · 2019 · 13 citations

Non-volatile Memory, Nitrogen Adsorption, Engineering +16