J.L. Autran

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari, Nicolas Cavassilas, J.L. Autran et al. · Solid-State Electronics · 2006 · 107 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

Daniela Munteanu, J.L. Autran · Solid-State Electronics · 2003 · 77 citations

Device Modeling, Quantum Science, Two-dimensional Modeling +9

75 nm damascene metal gate and high-k integration for advanced CMOS devices

B. Guillaumot, X. Garros, F. Lime et al. · 2003 · 69 citations

Low-power Electronics, Electrical Engineering, Low Ioff +14

Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Michel Houssa, J.L. Autran, A. Stesmans et al. · Applied Physics Letters · 2002 · 61 citations

Engineering, Integrated Circuits, Chemistry +19

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

J.L. Autran, S. Serre, S. S. Semikh et al. · IEEE Transactions on Nuclear Science · 2012 · 44 citations

Electrical Engineering, Engineering, Physics +13